新闻与活动

2015 8/31~9/3, IIC深圳会展中心参展

2013/6/18-20, 台北南港展览馆,2013年台湾植物工厂展参展.

2/23~25, IIC深圳会展中心参展

GaN FET Gate Driver IC CS8201M has been approved & adopted by an international customer.

High Speed Super Low Power SRAM 8M has been approved & adopted by SECOM.

COVID-19检测-256M SDRAM获得日本医疗设备公司采用.

512M SDRAM has been approved by POSTEK, China.

获南港IC设计育成中心支持,晶发全力进行新产品研发.

Low Power SRAM 256K 经Siemens认证.

CS8826AF LED Driver IC 经SUNRAY认证.

8M Super Low Power SRAM 经Dallas-Maxim认证.

2M / 4M Low Power SRAM 经Sharp认证.

CS8803 经GLUX认证.

Low Power SRAM 256K 经Casio认证.

Low Power SRAM 2M 经LGE核可.

February 21, 2005: 专利证号 M257513 - 一种芯片堆栈的封装技术.

Low Power SRAM 256K, 1M, 4M 经美国Dallas-Maxim Semiconductor核可.

Low Power SRAM 256K 经德国Siemens核可.

Low Power SRAM 256K 经韩国DAEWOO核可.

Low Power SRAM 256K 经日本SHARP核可

Low Power SRAM 4M 经Sony-Ericsson核可